High-k/Ge MOSFETs for future nanoelectronics

Kamata, Y. (Toshiba Corp., Yokohama, Japan)

Source: Materials Today, v 11, n 1-2, Jan.-Feb. 2008, 30-8
Publisher: Elsevier Science B.V., Netherlands

Abstract: Recently developed high-permittivity (k) materials have reopened the door to Ge as a channel
material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge gate stacks are very promising for future nanoscale devices. This article reviews the opportunities and challenges of high-k/Ge MOSFET technology. The most important technical issue is the passivation of the Ge surface. Physical phenomena and electrical characteristics that depend on the high-k/Ge interface are discussed on the basis of the material properties of Ge oxide to provide insights for future progress. [All rights reserved Elsevier]. (119 refs.)

terms:  germanium  -  high-k dielectric thin films  -  MOSFET  -  nanoelectronics  -  passivation