Electronic properties of semiconductor nanowires

Lew Yan Voon, L.C. (Department of Physics, Wright State University); Zhang, Yong; Lassen, B.; Willatzen, M.; Xiong, Qihua; Eklund, P.C.

Source: Journal of Nanoscience and Nanotechnology, v 8, n 1, January, 2008, p 1-26

ISSN: 1533-4880

Publisher: American Scientific Publishers

Abstract: This paper provides a review of the state-of-the-art electronic-structure calculations of semiconductor nanowires. Results obtained using empirical k · p, empirical tight-binding, semi-empirical pseudopotential, and with ab initio methods are compared. For conciseness, we will restrict our detailed discussions to free-standing plain and modulated nanowires. Connections to relevant experimental data, particularly band gaps and polarization anisotropy, will be made since these results depend crucially on the electronic properties. For completeness, a brief review on the synthesis of nanowires is included. Copyright © 2008 American Scientific Publishers All rights reserved. (232 refs.)