Electrical properties of surface-tailored ZnO nanowire field-effect transistors

Hong, Woong-Ki (Department of Materials and Science Engineering, Gwangju Institute of Science and Technology); Jo, Gunho; Kwon, Soon-Shin; Song, Sunghoon; Lee, Takhee

Source: IEEE Transactions on Electron Devices, v 55, n 11, Special Issue on Nanowire Transistors: Modeling, Device Design, and Technoilogy, 2008, p 3020-3029

Publisher: Institute of Electrical and Electronics Engineers Inc. 

Abstract: A review on the tunable electrical properties of ZnO nanowire field-effect transistors (FETs) is presented. The FETs made from surface-tailored ZnO nanowire exhibit two different types of operation modes, which are distinguished as depletion and enhancement modes in terms of the polarity of the threshold voltage. We demonstrate that the transport properties of ZnO nanowire FETs are associated with the influence of nanowire size and surface roughness associated with the presence of surface trap states at the interfaces as well as the surface chemistry in environments. © 2008 IEEE. (73 refs.)

terms: Surface properties - Electric properties - Electric wire - Field effect transistors - Friction - MESFET devices - Nanostructured materials - Nanostructures - Nanowires - Passivation - Semiconducting zinc compounds - Surface chemistry - Surface roughness - Transistors - Transport properties - Zinc alloys - Zinc oxide