Lithography

Electron beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a beam of electrons in a patterned fashion across a surface covered with a film (called the resist), ("exposing" the resist) and of selectively removing either exposed or non-exposed regions of the resist ("developing"). The purpose is to create very small structures in the resist that can subsequently be transferred into another material for a number of purposes, for example for the creation of very small electronic devices. The primary advantage of electron beam lithography is that it is one of the ways to beat the diffraction limit of light and make features in the nanometer regime. This form of maskless lithography has found wide usage in photomask-making used in photolithography, low-volume production of semiconductor components, and research & development. On the other hand, the key limitation of electron beam lithography is throughput, i.e., the very long time it takes to expose an entire silicon wafer or glass substrate. A long exposure time leaves the user vulnerable to beam drift or instability which may occur during the exposure. Also, the turn-around time for reworking or re-design is lengthened unnecessarily if the pattern is not being changed the second time.

Further information:

1. McCord, M. A.; M. J. Rooks (2000). "2". SPIE Handbook of Microlithography, Micromachining and Microfabrication.
2. J. A. Liddle et al. (2003). "Resist Requirements and Limitations for Nanoscale Electron-Beam Patterning". Mat. Res. Soc. Symp. Proc. 739 (19): 19–30.
3. H. Yang et al., Proceedings of the 1st IEEE Intl. Conf. on Nano/Micro Engineered and Molecular Systems, pp. 391-394 (2006).
4. Article Lithography from Wikipedia, the Free Enciclopedia. Available under the license Creative Commons Attribution-Share Alike.

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