Photoresist

A photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface. Photoresists are classified into two groups: positive resists and negative resists. A positive resist is a type of photoresist in which the portion of the photoresist that is exposed to light becomes soluble to the photoresist developer. The portion of the photoresist that is unexposed remains insoluble to the photoresist developer. A negative resist is a type of photoresist in which the portion of the photoresist that is exposed to light becomes insoluble to the photoresist developer. The unexposed portion of the photoresist is dissolved by the photoresist developer. This particular parameter is closely related to the thickness of the applied photoresist, with thinner layers corresponding to shorter wavelengths, permitting a reduced aspect ratio and a reduced minimum feature size. This is important in microelectronics and especially the ITRS reduction in minimum feature size. Intel has semiconductor fabrication facilities currently operating at the 45 nanometer node.

Further information:

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5. L. V. Lukin and A. A. Balakin, Chem. Phys. vol. 265, 87-104 (2001). 
6. Article Photoresist from Wikipedia, the Free Enciclopedia. Available under the license Creative Commons Attribution-Share Alike.

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